IRF9541 データシートの表示（PDF） - Harris Semiconductor
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IRF9541 Datasheet PDF : 11 Pages
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IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF9540, RF1S9540,
RF1S9540SM
IRF9541
IRF9542
IRF9543 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current
TC
TC
=
=
25oC .
100oC
.
.
.
.
.
.
.
.
.
.
.
.
...
...
...
...
...........
...........
...
...
.........
.........
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . PD
Linear Derating Factor (Figure 1) . . . . . . . . . . . . . . . . . . . . . .
-100
-100
-19
-12
-76
±20
150
1
-80
-100
-80
V
-80
-100
-80
V
-19
-15
-15
A
-12
-10
-10
A
-76
-60
-60
A
±20
±20
±20
V
150
150
150
W
1
1
1
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . TL
(0.063in (1.6mm) from case for 10s)
960
-55 to 175
300
960
960
960
mJ
-55 to 175 -55 to 175 -55 to 175
oC
300
300
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
IRF9540, IRF9542,
RF1S9540, RF1S9540SM
BVDSS ID = -250µA, VGS = 0V
IRF9541, IRF9543
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF9540, IRF9541,
RF1S9540, RF1S9540SM
VGS(TH) VGS = VDS, ID = -250µA
IDSS VDS = Rated BVDSS, VGS = 0V
VDS
TC =
= 0.8 x
125oC
Rated
BVDSS,
VGS
=
0V
ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V
IRF9542, IRF9543
Gate to Source Leakage Current
On Resistance (Note 2)
IRF9540, IRF9541,
RF1S9540, RF1S9540SM
IGSS
rDS(ON)
VGS = ±20V
ID = -10A, VGS = -10V
IRF9542, IRF9543
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
gfs
td(ON)
tr
td(OFF)
tf
VDS > ID(ON) x rDS(ON) MAX, ID = -6A
VDD = -50V, ID ≈19A, RG = 9.1Ω, RL = 5Ω
(Figure 19) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
MIN TYP MAX UNITS
-100 -
-80
-
-2
-
-
-
-
-
-
V
-
V
-4
V
-25
µA
-250
µA
-19
-
-
A
-15
-
-
A
-
-
±100
nA
-
0.15 0.20
Ω
-
0.22 0.30
Ω
5
7
-
S
-
16
20
ns
-
65
100
ns
-
47
70
ns
-
28
70
ns
2
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