IRF9541 データシートの表示（PDF） - Harris Semiconductor

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IRF9541

-15A and -19A, -80V and -100V, 0.20Ω and 0.30Ω, P-Channel Power MOSFETs

Harris Semiconductor 

IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM

Typical Performance Curves Unless Otherwise Specified (Continued)

0.26

-100

PULSE DURATION = 80µs

0.22

VGS = -10V

-10

TJ = 125oC

-1.0

TJ = 25oC

TJ = -55oC

-0.10

-2

-4

-6

-8

-10 -12 -14

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS

VGS = -10V

2.5 ID = -10A

2.0

0.18

VGS = -20V

0.14

0.10

0

0

-20

-40

-60

-80

-100

ID, DRAIN CURRENT (A)

NOTE: Heating effect of 5µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE

FOR VARYING CONDITIONS OF GATE VOLTAGE

AND DRAIN CURRENT

1.25

1.15

1.5

1.05

1.0

0.95

0.5

0.85

0.2

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE

ON RESISTANCE vs JUNCTION TEMPERATURE

0.75

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

2000

1600

1200

800

400

CISS

COSS

CRSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

15

80µs PULSE TEST

12

TJ = -55oC

9

TJ = 25oC

TJ = 125oC

6

3

00

-10

-20

-30

-40

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

0

0

-20

-40

-60

-80

-100

ID, DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

5

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