FCX591 データシートの表示（PDF） - TY Semiconductor

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FCX591

PNP Silicon Planar Medium Power High Performance Transistor

TY Semiconductor 

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Product specification

FCX591

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

DC current gain

Transition frequecy

Output capacitance

* Pulse test: tp ≤ 300 μs; d ≤ 0.02.

Symbol

Test conditons

V(BR)CBO IC=-100μA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100μA

ICBO VCB=-60V

IEBO VEB=-4V, IC=0

VCE(sat) IC=-1A,IB=-100mA

VBE(sat) IC=-1A,IB=-100mA

VBE(ON) IC=-1A,VCE=-5V

IC=-1mA, VCE=-5V*

IC=-500mA,VCE=-5V

hFE

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

fT IC=-50mA,VCE=-10V,f=100MHz

Cob VCB=-10V,f=1MHz

■ Marking

Marking

P1

Min Typ Max Unit

-80

V

-60

V

-5

V

-100 nA

-100 nA

-0.6 V

-1.2 V

-1.0 V

100

100

300

80

15

150

MHz

10 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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