BDV67C データシートの表示（PDF） - New Jersey Semiconductor
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BDV67C Datasheet PDF : 2 Pages
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iodu.cki, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDV67/A/B/C
DESCRIPTION
• Collector Current -lc= 16A
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ lc= 10A
• Complement to Type BDV66/A/B/C
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDV67
80
VCBO
Collector-Base
Voltage
BDV67A
100
V
BDV67B
120
BDV67C
140
BDV67
60
VCEO
Collector-Emitter
Voltage
BDV67A
80
V
BDV67B
100
BDV67C
120
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
175
W
150
•c
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.625 r/w
!11I
rby•••2
•— iW--Uw — | — l
R1
' 23
PIN 1 B^»SE
2. CO LLECTOR
3. a1ITTER
TO- 3PN package
-*•— B—>-
i$F
• 1-
r
t;
-*.C •*—
*-s
. r '~:^_
mm
DIM WIN MAX
A 19.90 20.10
B 15.50 15.70
f 4,70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3,10
H 3.20 3.40
J 0.595 0,605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3,35 3.45
S 1,995 2.005
U 5.90 6. 0
Y 9,90 10,10
N.I Somi-CdiRliictors reserves the right to change tost cnmlitinns. pjiruineter limits niul psickagc ilimensions without
imiice. Infbiimitinn liirniMial hv N.I Sciiti-Coiuluetors is hclic\eil to he huih ncx-iirate iiikl rolinhlo ;it (lit- lime ol'i'.dii
in piv^^. I l n \ \ e \ e r . N.I Seini-CdiKliielurs :issunu;s no rosponsihilil) lor nn\s or OMUSMOMN iliscn^ereil in its use.
N I Si-ini-( iMiilncidis I_-IU.'IHH;IU(.'S ar-MiiKT^ In \i-riI'y that Jaliisheol-; are aiiK-iil heluiv plaeiiiL; ni'ilei's.
Onrilih/ S
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