BDV67 データシートの表示（PDF） - New Jersey Semiconductor
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BDV67 Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV67
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDV67A .
BDV67B
!„— mnmA -I,-,— n
BDV67C
VcE(sat) Collector-Emitter Saturation Voltage lc=10A;lB=40mA
VBE(on) Base-Emitter On Voltage
lc=10A;VCE=3V
ICEO
Collector Cutoff Current
VCE= VaVcEOmax! le= 0
BDV67
VCB=40V;lE=0;Tj=150"C
BDV67A VCB=50V;lE=0;Tj=150-C
ICBO
Collector Cutoff Current
BDV67B V0B=60V;lE=0;Tj=150"C
BDV67C VCB=70V;lE=0;Tj=150-C
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VCB= VcBOmaxI |E= 0
VEB= 5V; lc= 0
lc=10A; VCE=3V
COB
Output Capacitance
!E=O; VcB=10V;ftest=1MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
lc=10A;lBi=-lB2=40mA;
Vcc= 12V
BDV67/A/B/C
MIN TYP. MAX UNIT
60
80
V
100
120
2
V
2.5
V
1
mA
5
mA
1
mA
5
mA
1000
300
pF
1
us
3.5
PS
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