BDP954 データシートの表示（PDF） - Infineon Technologies
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BDP954 Datasheet PDF : 8 Pages
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BDP948_BDP950_BDP954
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BDP948
IC = 10 mA, IB = 0 , BDP950
IC = 10 mA, IB = 0 , BDP954
V(BR)CEO
45
-
60
-
100
-
V
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BDP948
IC = 100 µA, IE = 0 , BDP950
IC = 100 µA, IE = 0 , BDP954
V(BR)CBO
45
-
-
60
-
-
120
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5
-
-
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
ICBO
µA
-
-
0.1
-
-
20
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 2 V BDP948,BDP950
BDP954
IEBO
hFE
-
- 100 nA
-
25
-
-
85
- 475
50
-
-
15
-
-
IC = 1 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
VCEsat
-
-
0.5 V
VBEsat
-
-
1.3
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 100 MHz
1Pulse test: t < 300µs; D < 2%
fT
- 100 - MHz
Ccb
-
40
- pF
3
2011-10-05
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