BDW83 データシートの表示（PDF） - New Jersey Semiconductor
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BDW83 Datasheet PDF : 2 Pages
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<^>£.mi-(Lona.uet oi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ducts., Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Darlington Power Transistor
BDW83/A/B/C
DESCRIPTION
• Collector Current -lc= 15A
• High DC Current Gain-hFE= 750(Min)@ lc= 6A
• Complement to Type BDW84/A/B/C
APPLICATIONS
• Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDW83
45
VCER
Collector-Emitter
Voltage
BDW83A
60
BDW83B
80
V
BDW83C
100
BDW83
45
BDW83A
60
VCEO
Collector-Emitter
Voltage
V
BDW83B
80
BDW83C
100
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
15
A
0.5
A
3.5
W
150
150
•c
-65-150 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
<th j-c Thermal Resistance, Junction to Case
0.83 •CM/
Thermal Resistance,Junction to Ambient 35.7 °C/W
Quality Semi-Conductors
irr-K
1 23
PIN 1.BASE
2.COLLECTOR
3. EMITTER
TO-3PN package
-B—- —. c
u
H
mm
DIM MIN MAX
A '9.90 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.10
H 3.20 3.40
J 0.595 0.605
K 20.50 20.70
L 1.90 2.10
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S ' 1.995 2.005
U 5.< 0 6.10
Y 9,S 0 10.10
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