BDX84A データシートの表示（PDF） - New Jersey Semiconductor

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BDX84A

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One,

Silicon PNP Darlington Power Transistor

DESCRIPTION

• High DC Current Gain-

: hFE=1000(Min)@ lc= -5A

• Collector-Emitter Sustaining Voltage-

: VCEO<SUS)= -45V(Min)- BDX84; -60V(Min)- BDX84A

-SOV(Min)- BDX84B; -100V(Min)- BDX84C

APPLICATIONS

• Power switching

• Hammer drivers

• Series and shunt regulators

• Audio amplifiers

ABSOLUTE MAXIMUM RATlNGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

BDX84

-45

UNIT

BDX84A

-60

VCBO Collector-Base Voltage

V

BDX84B

-80

BDX84C -100

BDX84

-45

BDX84A

-60

VCEO Collector-Emitter Voltage

V

BDX84B

-80

BDX84C -100

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-10

A

I CM

Collector Current-Peak

-15

A

IB

Base Current

Collector Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

-250

mA

125

W

200

•c

Tstg

Storage Temperature Range

-65-200 °c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rthj-c Thermal Resistance.Junction to Case

Quality Semi-Conductors

MAX UNIT

1.4 •CM/

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BDX84/A/B/C

PIN

1.BASE

2. EMITTER

3. COLLECT OR (CASE)

TO-3 package

.A

I, _»IU_ D 2 PL

—U

if

nun

DIM MM KAX

A

3900

B 25.30 26.6?

C

7.8C 8.30

D

0.90

1 10

£

1.40 1.60

i}

109?

H

546

j< 11 40 13.50

L 1675 iros

N 1940 19,62

Q

4.00 420

U XI 00 30M

v

4.30 450

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