BDX87 データシートの表示（PDF） - New Jersey Semiconductor
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BDX87 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION
• High DC Current Gain-
: hFE= 750(Min)@ lc= 6A
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
• Complement to Type BDX88/A/B/C
APPLICATIONS
• Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=251)
SYMBOL
PARAMETER
VALUE
BDX87
45
UNIT
BDX87A
60
VCBO Collector-Base Voltage
V
BDX87B
80
BDX87C
100
BDX87
45
BDX87A
60
VCEO Collector-Emitter Voltage
V
BDX87B
80
BDX87C
100
VEBO
Ic
ICM
IB
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ TC=25"C
Junction Temperature
Storage Temperature Range
5
V
12
A
18
A
200
mA
120
W
200
°C
-65-200
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth \-c Thermal Resistance.Junction to Case
Quality Semi-Conductors
MAX UNIT
1.45 "CM/
1— ^f—
R1
93
1
]
i "ik
I[
l,2
DIM
1.BASE
S.BulinER
3. COLLECT OR (CASE)
TO-3 package
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i IIr
I
:
^I^DJPL
|^- - u—* ^•ran
'1^\ I
t
-J-— ^J c B
t
?^s f I
\ 1^]
inin
DIM MIN UA3I
A
3900
Bc
25.30 26.67
7.90 8.30
D 0.90 1.10
E
f .40 1 .50
£
10.92
H
S4S
V, 1140 1350
L 1675 17.05
N 1940 19*2
g
4.00 420
V 3999 ^^
V
430 450
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