BGY585A データシートの表示（PDF） - NXP Semiconductors.
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BGY585A Datasheet PDF : 8 Pages
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NXP Semiconductors
BGY585A
550 MHz, 18.2 dB gain push-pull amplifier
3. Ordering information
Table 3. Ordering information
Type
number
Package
Name Description
BGY585A -
rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 ×
6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Version
SOT115J
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Vi
RF input voltage
-
Tstg
storage temperature
−40
Tcase
case operating temperature
−20
5. Characteristics
Max
65
+100
+100
Unit
dBmV
°C
°C
Table 5. Characteristics
Tcase = 30 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Bandwidth 40 MHz to 550 MHz
Gp
power gain
f = 50 MHz
f = 550 MHz
SL
slope cable equivalent f = 40 MHz to 550 MHz
FL
flatness of frequency f = 40 MHz to 550 MHz
response
s11
input return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 550 MHz
s22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 550 MHz
CTB
composite triple beat
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
Xmod
cross modulation
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
CSO
composite second order 77 channels flat; Vo = 44 dBmV;
distortion
measured at 548.5 MHz
d2
second order distortion
Vo
output voltage
dim = −60 dB
F
noise figure
f = 550 MHz
Itot
total current
VB = 24 V
consumption (DC)
Min
Typ
17.7
-
18.8
-
0.5
-
-
-
20
-
19
-
18
-
20
-
19
-
18
-
-
-
-
-
-
-
[1] -
-
[2] 61.5
-
-
-
[3] -
220
Max Unit
18.7 dB
20
dB
2
dB
±0.2 dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
−59
dB
−62
dB
−59
dB
−72
dB
-
dBmV
8
dB
240
mA
BGY585A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 29 September 2010
© NXP B.V. 2010. All rights reserved.
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