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BGY885B データシートの表示(PDF) - NXP Semiconductors.

部品番号
コンポーネント説明
メーカー
BGY885B
NXP
NXP Semiconductors. NXP
BGY885B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
860 MHz, 20 dB gain push-pull amplifier
Product specification
BGY885B
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75
SYMBOL
Gp
SL
FL
s11
s22
s21
CTB
CSO
d2
Vo
NF
Itot
PARAMETER
CONDITIONS
MIN.
power gain
f = 50 MHz
19.5
f = 860 MHz
20
slope cable equivalent
f = 40 to 860 MHz
0
flatness of frequency response f = 40 to 860 MHz
input return losses
f = 40 to 80 MHz
20
f = 80 to 160 MHz
18.5
f = 160 to 320 MHz
17
f = 320 to 640 MHz
15.5
f = 640 to 860 MHz
14
output return losses
f = 40 to 80 MHz
20
f = 80 to 160 MHz
18.5
f = 160 to 320 MHz
17
f = 320 to 640 MHz
15.5
f = 640 to 860 MHz
14
phase response
composite triple beat
f = 50 MHz
45
49 channels flat;
Vo = 44 dBmV;
measured at 859.25 MHz
composite second order distortion 49 channels flat;
Vo = 44 dBmV;
measured at 860.5 MHz
second order distortion
note 1
output voltage
noise figure
dim = 60 dB; note 2
f = 50 MHz
57.5
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
total current consumption (DC) note 3
TYP.
59
MAX.
20.5
2
±0.3
+45
60
60
68
5
5.5
6.5
6.5
7.5
235
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
2. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
2001 Nov 14
3

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