BGA420(2002) データシートの表示（PDF） - Infineon Technologies
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BGA420 Datasheet PDF : 6 Pages
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BGA420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024 fA
VAF = 39.251 V
NE = 1.7763 -
VAR = 34.368 V
NC = 1.3152 -
RBM = 1.3491
CJE = 3.7265 fF
TF =
4.5899 ps
BF =
83.23
-
IKF = 0.16493 A
BR = 10.526 -
IKR = 0.25052 A
RB = 15
RE = 1.9289
VJE = 0.70367 V
XTF = 0.3641 -
ITF = 1.3364 mA
VJC = 0.99532 V
PTF = 0
deg
MJC = 0.48652 -
TR = 1.4935 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC = 0.99469 -
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
C2
L BO
IN
C1
C CB
L1
14
L BI 11 BGA 420 13 L CI
Chip
C’-E’-
12
Diode
C BE
L EI
L2
+V
C3
L CO
OUT
C CE
L EO
GND
EHA07388
NF = 1.0405 -
ISE = 15.761 fA
NR = 0.96647 -
ISC = 0.037223 fA
IRB = 0.21215 A
RC = 0.12691
MJE = 0.37747 -
VTF = 0.19762 V
CJC = 96.941 fF
XCJC = 0.08161 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
RS = 20
LBI =
LBO =
LEI =
LEO =
LCI =
0.36
0.4
0.3
0.15
0.36
nH
nH
nH
nH
nH
LCO =
CBE =
0.4
95
nH
fF
CCB = 6
fF
CCE = 132
fF
C1 =
28
fF
C2 =
88
fF
C3 =
8
fF
L1 =
0.6
nH
L2 =
0.4
nH
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
4
Jan-29-2002
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