MRF5812 データシートの表示（PDF） - Advanced Semiconductor
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MRF5812 Datasheet PDF : 1 Pages
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MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for
high current, low power, low noise,
amplifiers up to 1.0 GHz.
FEATURES:
• Low Noise – 2.5 dB @ 500 MHz
• Ftau – 5.0 GHz @ 10 V, 75 mA
• Cost Effective SO-8 package
MAXIMUM RATINGS
IC
200 mA
VCBO
30 V
VCEO
15 V
VEBO
2.5 V
PDISS
1.25 W @ TC = 25 °C
PACKAGE STYLE SO-8
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCEO
IC = 5.0 mA
BVEBO
IE = 0.1 mA
ICBO
VCB = 15 V
IEBO
VCE = 2.0 V
hFE
VCE = 5.0 V
IC = 50 mA
MINIMUM TYPICAL MAXIMUM
30
15
2.5
0.1
0.1
50
200
UNITS
V
V
V
mA
mA
---
COB
FTAU
VCB = 10 V
VCE = 10 V
IC = 75 mA
f = 1.0 MHz
f = 1.0 GHz
1.4
2.0
pF
5.0
GHz
NFmin
GNF
GU max
MSG
|S21|2
VCE = 10 V
IC = 50 mA
2.0
3.0
dB
13
15.5
%
f = 500 MHz
17.8
dB
20
dB
15
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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