BAS321 データシートの表示（PDF） - NXP Semiconductors.

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BAS321

General purpose diode

NXP Semiconductors. 

Nexperia

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Conditions

IF = 100 mA; Tj = 25 °C

IF = 200 mA; Tj = 25 °C

VR = 200 V; Tj = 25 °C

VR = 200 V; Tj = 150 °C

VR = 0 V; f = 1 MHz; Tj = 25 °C

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tj = 25 °C

300

IF

(mA)

mbk927

600

IF

(mA)

200

400

BAS321

General purpose diode

Min Typ Max Unit

-

-

1

V

-

-

1.25 V

-

-

100 nA

-

-

100 µA

-

-

2

pF

-

-

50

ns

mbg384

(1) (2)

(3)

100

200

0

0

50

100

150

200

Tamb (°C)

Device mounted on an FR4 PCB

Fig. 1. Maximum permissible continuous forward

current as a function of ambient temperature

102

IFSM

(A)

10

mbg703

0

0

1

VF (V)

2

Fig. 2.

(1) Tj = 150 °C; typical values

(2) Tj = 25 °C; typical values

(3) Tj = 25 °C; maximum values

Forward current as a function of forward

voltage

102

mbg381

IR

(µA)

10

(1)

(2)

1

1

10- 1

10- 1

1

10

102

103

104

tp (µs)

Based on square wave currents

Tj = 25 °C prior to surge

Fig. 3. Maximum permissible non-repetitive peak

forward current as a function of pulse duration

10- 2

0

100

Tj (°C)

200

Fig. 4.

(1) VR = VRmax; maximum values

(2) VR = VRmax; typical values

Reverse current as a function of junction

temperature

BAS321

Product data sheet

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18 June 2019

© Nexperia B.V. 2019. All rights reserved

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