BSM 35 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1.2 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 35 A, Tj = 25 °C
-
2.7
3.2
VGE = 15 V, IC = 35 A, Tj = 125 °C
-
3.3
3.9
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.6
1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2.4
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
150
AC Characteristics
Transconductance
VCE = 20 V, IC = 35 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
11
Ciss
-
Coss
-
Crss
-
-
-
2
-
0.3
-
0.14 -
Unit
V
mA
nA
S
nF
2
Oct-21-1997