Q67000-S245(2002) データシートの表示（PDF） - Infineon Technologies
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Q67000-S245 Datasheet PDF : 8 Pages
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Rev. 1.0
BSS123
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max, 0.09 0.19
-S
ID=0.14A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0, VDS=25V,
f=1MHz
VDD=50V, VGS=10V,
ID=0.17A, RG=6Ω
-
55 69 pF
-
8.5 10.6
-
5 6.3
-
2.7
4 ns
-
3.1 4.6
-
9.9 14.8
-
25 37
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=80V, ID=0.17A
VDD=80V, ID=0.17A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=80V, ID = 0.17 A
- 0.055 0.082 nC
- 0.77 1.15
- 1.78 2.67
-
2.6
-V
Reverse Diode
Inverse diode continuous
IS
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TA=25°C
VGS=0, IF = IS
VR=50V, IF=lS,
diF/dt=100A/µs
-
- 0.17 A
-
- 0.68
- 0.81 1.2 V
- 27.6 41.1 ns
- 10.5 15.7 nC
Page 3
2002-12-10
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