BSS123E6433 データシートの表示（PDF） - Siemens AG
部品番号
コンポーネント説明
メーカー
BSS123E6433 Datasheet PDF : 8 Pages
| |||
BSS 123
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 350
K/W
≤ 285
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
100
-
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
0.8
1.5
2
Zero gate voltage drain current
IDSS
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
-
0.1
1
VDS = 60 V, VGS = 0 V, Tj = 25 °C
-
2
60
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
-
10
50
Drain-Source on-state resistance
RDS(on)
Ω
VGS = 10 V, ID = 0.17 A
-
3
6
VGS = 4.5 V, ID = 0.17 A
-
4.5
10
Semiconductor Group
2
Sep-13-1996
Share Link: 