BUK7610-30 データシートの表示（PDF） - Philips Electronics
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BUK7610-30 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7610-30
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 30 V; VGS = 0 V;
Tj = 175˚C
VGS = ±10 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 10 V; ID = 25 A
Tj = 175˚C
MIN.
30
27
2
1
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
-
9 10.5 mΩ
-
- 19.5 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
ID = 75 A; VDD = 24 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 25 V; ID = 25 A;
VGS = 10 V; RG = 5 Ω
Resistive load
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
51
9
20
2000
700
300
26
35
50
30
3.5
4.5
MAX.
-
-
-
-
-
-
-
30
85
60
45
-
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 75 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
75
A
-
- 240 A
- 0.95 1.2 V
-
1.0
-
V
-
95
-
ns
- 0.15 -
µC
December 1997
2
Rev 1.100
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