BUX22 データシートの表示（PDF） - New Jersey Semiconductor
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BUX22 Datasheet PDF : 3 Pages
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BUX22
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min, Typ.
ICEO Collector Cut-off
Current (IB = 0)
VOE = 200 V
ICEX Collector Cut-off
Current
VCE = 300V
Tease = 125 °C
VCE = 300V
VBE = -1.5V
VBE = -1.5V
IEBO Emitter Cut-off Current VEB = 5 V
(lc = 0)
VcEO(sus)* Collector-Emitter
Ic = 200 mA
250
Sustaining Voltage
VEBO Emitter-Base Voltage IE = 50 mA
7
(lc = 0)
VcE(sat)* Collector-Emitter
Saturation Voltage
Ic = 10 A
lc = 2 0 A
IB = 1 A
0.2
IB = 2.5 A
0.32
VBE(sat)* Base-Emitter
Saturation Voltage
lc = 2 0 A
IB = 2. 5 A
1.1
hFE* DC Current Gain
Ic = 10 A
lc = 20A
VCE = 4 V
20
VcE=4V
10
Is/b
Second Breakdown
VCE = 140 V
Collector Current
VCE = 20 V
t = 1s
0.15
t = 1s
17.5
fr
Transistor Frequency VCE = 15 V
Ic = 2 A
10
f = 10 MHz
ton Turn-on Time
ts
Storage Time
tf
Fall Time
lc = 20 A
VCC = 100V
lc = 20 A
IB2 = - 2 . 5 A
IBI = 2 .5 A
0.22
IBI = 2 .5 A
1.5
VCC=100V
0.17
Clamped E5/b
Vciamp= 250 V
25
Collector Current
L = 500 uH
t Pulsed: Pulse duration = 300ns, duty cycle < 2 %
Max.
3
3
12
1
1
1.5
1.5
60
1.3
2
0.5
Unit
mA
rnA
mA
rnA
V
V
V
V
V
A
A
MHz
J1S
US
us
A
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