BUV42 データシートの表示（PDF） - New Jersey Semiconductor
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BUV42 Datasheet PDF : 4 Pages
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1,46
°C/W
ELECTRICAL CHARACTERISTICS (TcaSe = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER Collector Cut-off
VCE = VCEV
Current (RBE = 10£1) VCE = VCEV TC=100°C
ICEV Collector Cut-off
Current
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = - 1.5VTC=100°C
IEBO Emitter Cut-off
Current (Ic = 0)
VEB = 5 V
VcEO(sus)* Collector-Emitter
Sustaining Voltage
lc = 0.2A
L = 25 mH
VEBO
Emitter-base
Voltage (lc = 0)
IE = 50 mA
VcE(sat)* Collector-Emitter
Saturation Voltage
lc = 2A
lc = 4A
lc = 6A
IC = 2A
lc = 4A
IC = 6A
IB = 0.13A
IB = 0.4A
IB = 0.75A
IB = 0.13A
IB = 0.4A
IB = 0.75A
TJ = 100°C
TJ = 100°C
Tj = 100°C
VBE(sat)* Base-Emitter
Saturation Voltage
lc = 4A
lc = 6A
lc = 4A
lc = 6A
IB = 0.4A
IB = 0.75A
IB = 0.4A
IB = 0.75A
TJ = 100°C
TJ = 100°C
dio/dt*
Rated of Rise of
on-state Collector
Current
VCC = 200V Rc = 0
IB1 = 0.6A
TJ = 25°C
TJ = 1 00°C
VcE(2us) Collector Emitter
Dynamic Voltage
Vcc = 200V
RC = 50£i
IB1 = 0.4A
TJ = 25°C
TJ = 1 00°C
VcE(4MS) Collector Emitter
Dynamic Voltage
VCC = 200V
Rc = 50H
> Pulsed: Pulse duration = 300 us, duty cycle = 2 %
IB1 = 0.4A
TJ = 25°C
TJ = 100°C
Win.
250
7
25
20
Typ.
0.25
0.4
0.5
0.25
0.45
0.6
1
1.1
0.9
1.1
40
35
1.7
2.5
0.9
1.1
Max.
0.5
2.5
0.5
2
1
0.8
0.9
1.2
0.9
1.2
1.5
1.3
1.5
1.3
1.5
2.5
4
1.7
2
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V
A/us
A/us
V
V
V
V
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