BUV42 データシートの表示（PDF） - New Jersey Semiconductor
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BUV42 Datasheet PDF : 4 Pages
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BUV42
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
tr
RESISTIVE LOAD
ts
Rise Time
tf
Storage Time
Fall Time
Vcc = 200V
VBB = -5V
Rs2 = 3.3£i
INDUCTIVE LOAD
ts
Storage Time
Vcc = 200V
tf
Fall Time
Ice = 4A
tt
Tail Time in Turn-on VBB = -5V
tc
Crossover Time
Lc = 2.5mH
Ic = 6A
IBI = 0.75A
Tp = 30ns
Vciamp = 250V
IB = 0.4A
RB2 = 6.312
ts
Storage Time
tf
Fall Time
VCC = 200V
Ice = 4A
tt
Tail Time in Turn-on VBB = -5V
to
Crossover Time
Lc = 2.5mH
Vdamp = 250V
IB = 0.4A
RB2 = 6.3£i
Tj = 100°C
ts
Storage Time
Vcc = 200V
tf
Fall Time
Ice = 4A
tt
Tail Time in Turn-on VBB = 0
Lc = 2.5mH
Vclamp = 250V
IB = 0.5A
RB2 = 7.5fl
ts
Storage Time
tf
Fall Time
Vcc = 200V
Ice = 4A
tt
Tail Time in Turn-on VBB = 0
Lc = 2.5mH
* Pulsed: Pulse duration = 300 u,s, duty cycle = 2 %
Vciamp = 250V
IB = 0.4A
RB2 = 7.5H
Tj = 100°C
Min. Typ.
0.3
1
0.15
Max.
0.4
1.6
0.3
Unit
us
(is
(IS
1.2
1.8
(IS
0.08 0.2
(is
0.03 0.12 (is
0.15 0.35
(IS
1.8 2.4
(IS
0.2 0.4
US
0.08 0.2
(IS
0.4 0.7
US
2.5
MS
0.4
(IS
0.15
(IS
4.8
(IS
0.7
(IS
0.4
(IS
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