BU126 データシートの表示（PDF） - New Jersey Semiconductor
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BU126 Datasheet PDF : 2 Pages
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J.E,I$.£,U
O^
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
loaucti, One,
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BU126
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:VCEO(sus)=300V(Min.)
• Collector Current- lc= 3A
APPLICATIONS
• Designed for use in regulator, inverter, switching mode
power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
750
V
VOEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC= 25 'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
40
W
125
"C
-65-125
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
V
Rth j-c Thermal Resistance.Junction to Case
MAX UNIT
2.5 TC/W
Quality Semi-Conductors
I
1^
"X.
I
PIN 1.BASE
J. EMITTER
3. COLLECT OR (CASE)
TO-3 package
• A •(
, [ f— N-*|
1
1
t-E
1
[\ ^C
-JU- D 1 PL
-J t x^"^' /
^^7.^<—S~^~c^— G 8
\-&5=\n
DIM MM MAX
A
3900
B 2530 26 57
C 7ao s:K>
D 090 1 0
E
1 40 1 ;.«o
G
10.92
H
5.46
K "<0 13.50
L 16.75 17 K
N 19,40 19 52
p
4.00 4
U 3000 3° » 30
V 430 4 §9_
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