BUK9506-40B データシートの表示（PDF） - Philips Electronics
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BUK9506-40B Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK95/9606-40B
TrenchMOS™ logic level FET
300
10
ID
(A)
7
6
5
200
100
0
0
2
4.8
4.6
03nm18
Label is VGS (V)
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
4
6
8
10
VDS (V)
12
RDSon
(mΩ)
10
8
6
4
3
03nm17
7
11
15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nm19
16
2
Label is VGS (V)
RDSon 3 3.2 3.4 3.6
a
(mΩ)
3.8
4
1.5
12
03aa27
1
8
5
0.5
10
4
0
100
Tj = 25 °C
200
300
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11241
Product data
Rev. 01 — 14 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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