BUK7520-100A データシートの表示（PDF） - NXP Semiconductors.
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BUK7520-100A Datasheet PDF : 14 Pages
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NXP Semiconductors
BUK7520-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3
IDM
peak drain current
Tmb = 100 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
see Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 60 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
120
Ider
(%)
80
03aa24
120
Pder
(%)
80
Min Max Unit
-
100 V
-
100 V
-20 20 V
-
63 A
-
44 A
-
253 A
-
200 W
-55 175 °C
-55 175 °C
-
63 A
-
253 A
-
400 mJ
03na19
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7520-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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