BSS806N データシートの表示（PDF） - ZP Semiconductor
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BSS806N Datasheet PDF : 3 Pages
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BSS806N
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
min.
Values
typ.
Unit
max.
C iss
-
C oss
V GS=0 V, V DS=10 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=10 V, V GS=2.5 V,
-
t d(off)
I D=2.3A, R G=6 Ω
-
tf
-
370
529 pF
118
169
20
29
7.5
- ns
9.9
-
12.0
-
3.7
-
Q gs
-
0.55
- nC
Q gd
V DD=10 V, I D=2.3 A,
-
0.58
-
Qg
V GS=0 to 2.5 V
-
1.7
-
V plateau
-
1.5
-V
IS
I S,pulse
T A=25 °C
V SD
V GS=0 V, I F=2.3 A,
T j=25 °C
t rr
V R=10 V, I F=2.3 A,
Q rr
di F/dt =100 A/µs
-
-
0.5 A
-
-
9.3
-
0.82
1.1 V
-
11
- ns
-
3.3
- nC
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