CF5010HK1-1 データシートの表示（PDF） - Nippon Precision Circuits
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CF5010HK1-1 Datasheet PDF : 25 Pages
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SM5010 series
Electrical Characteristics
5010AN×, BN×, DN× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
VIH INHN
VIL INHN
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
VOH = VDD
VOL = VSS
5010×N1
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010×N2
5010×N3
5010×N4
5010×N5
RUP2 Measurement cct 4
Rf Measurement cct 5
RD Design value
5010B××
5010A××
CG
Design value. A monitor pattern on a 5010B××
wafer is tested.
CD
5010A××
5010B××
Rating
Unit
min
typ
max
2.1
2.4
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.5
V
–
–
10
µA
–
–
10
–
5
10
–
3.5
7
–
2.5
5
mA
–
2
4
–
2
4
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
26
29
32
20
22
24
pF
26
29
32
20
22
24
5010AN×, AK×, BN×, BK×, DN× series
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 16mA
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 16mA
VIH INHN
VIL INHN
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 5.5V
VOH = VDD
VOL = VSS
5010×N1
Measurement cct 3, load cct 1,
IDD
INHN = open, CL = 50pF, f = 30MHz
5010×N2
5010×N3
5010×N4
5010×N5
Measurement cct 3, load cct 2,
INHN = open, CL = 15pF, f = 30MHz
RUP2 Measurement cct 4
Rf Measurement cct 5
5010×K1
RD Design value
5010B××
5010A××
CG
Design value. A monitor pattern on a 5010B××
wafer is tested.
CD
5010A××
5010B××
Rating
Unit
min
typ
max
3.9
4.2
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.8
V
–
–
10
µA
–
–
10
–
15
30
–
9
18
–
6
12
–
5
10
mA
–
5
10
–
10
20
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
26
29
32
20
22
24
pF
26
29
32
20
22
24
SEIKO NPC CORPORATION —8
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