CPH3456-TL-H データシートの表示（PDF） - ON Semiconductor
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CPH3456-TL-H Datasheet PDF : 5 Pages
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CPH3456
Power MOSFET
20V, 71mΩ, 3.5A, Single N-Channel
www.onsemi.com
Features
• ON-Resistance RDS(on)1=54mΩ (typ)
• 1.8V Drive
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
3.5
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
14
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm2×0.8mm)
Junction Temperature
Tj
1.0
W
150
°C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2×0.8mm)
Symbol
RθJA
Value
Unit
125
°C/W
VDSS
20V
RDS(on) Max
71 mΩ@4.5V
103 mΩ@2.5V
156 mΩ@1.8V
ID Max
3.5A
Electrical Connection
N-Channel
3
1 : Gate
1
2 : Source
3 : Drain
2
Packing Type:TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January 2015 - Rev. 2
Publication Order Number :
CPH3456/D
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