CPH6337(2013) データシートの表示（PDF） - ON Semiconductor

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CPH6337
(Rev.:2013)

P-Channel Power MOSFET –12V, –3.5A, 70mΩ, Single CPH6

ON Semiconductor 

Ordering number : ENA0923A

CPH6337

P-Channel Power MOSFET

–12V, –3.5A, 70mΩ, Single CPH6

http://onsemi.com

Features

• Ultrahigh-speed switching

• 1.8V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (1200mm2×0.8mm)

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Ratings

Unit

--12

V

±10

V

--3.5

A

--14

A

1.6

W

150

°C

--55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7018A-003

2.9

654

0.15

CPH6337-TL-E

Product & Package Information

• Package

: CPH6

• JEITA, JEDEC

: SC-74, SOT-26, SOT-457

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Marking

0.05

12

0.95

3

0.4

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

CPH6

TL

Electrical Connection

1, 2, 5, 6

3

4

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/91907PE TIIM TC-00000903 No. A0923-1/7

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