CPH6314 データシートの表示（PDF） - ON Semiconductor

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CPH6314

General-Purpose Switching Device Applications

ON Semiconductor 

CPH6314

Ordering number : ENN8236

CPH6314

Features

• Low ON-resistance.

• High-speed switching.

• 4V drive.

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

Conditions

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (1200mm2✕0.8mm)

Ratings

Unit

--30

V

±20

V

--4

A

--16

A

1.6

W

150

°C

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Marking : JQ

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Conditions

ID=--1mA, VGS=0

VDS=--30V, VGS=0

VGS=±16V, VDS=0

VDS=--10V, ID=--1mA

VDS=--10V, ID=--2A

ID=--2A, VGS=--10V

ID=--1A, VGS=--4.5V

ID=--1A, VGS=--4V

VDS=--10V, f=1MHz

VDS=--10V, f=1MHz

VDS=--10V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

min

--30

--1.2

2.5

Ratings

Unit

typ

max

V

--1

µA

±10

µA

--2.6

V

3.6

S

53

69 mΩ

92

129 mΩ

105

147 mΩ

510

pF

115

pF

78

pF

11

ns

20

ns

40

ns

32

ns

Continued on next page.

© 2011, SCILLC. All rights reserved.

Jan-2011, Rev. 0

Downloaded from Arrow.com.

Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com

Publication Order Number:

CPH6314/D

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