EBS26UC6APS データシートの表示（PDF） - Elpida Memory, Inc

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EBS26UC6APS

256MB SDRAM S.O.DIMM

Elpida Memory, Inc 

EBS26UC6APS

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before

proper device operation is achieved.

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to VSS

Supply voltage relative to VSS

VT

VDD

–0.5 to VDD + 0.5

(≤ 4.6 (max.))

V

–0.5 to +4.6

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

8

W

Operating temperature

TA

0 to +70

°C

1

Storage temperature

Tstg

–55 to +125

°C

Notes: 1. SDRAM device specification

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = 0 to +70°C) (SDRAM device specification)

Parameter

Symbol

min.

max.

Unit

Note

Supply voltage

VDD

3.0

3.6

V

1

VSS

0

0

V

2

Input high voltage

VIH

2.0

VDD + 0.3 V

3

Input low voltage

VIL

−0.3

0.8

V

4

Notes: 1. The supply voltage with all VDD pins must be on the same level.

2. The supply voltage with all VSS pins must be on the same level.

3. VIH (max.) = VDD + 2.0V for pulse width ≤ 3ns at VDD.

4. VIL (min.) = VSS − 2.0V for pulse width ≤ 3ns at VSS.

Data Sheet E0225E20 (Ver. 2.0)

7

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