BCW66H データシートの表示（PDF） - STMicroelectronics
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BCW66H Datasheet PDF : 4 Pages
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BCW66
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2
Max
375
Max
278
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (VBE = 0)
VCE = Rated VCES
VCE = Rated VCES
Tamb = 150 oC
IEBO
V(BR)CEO ∗
Collector Cut-off
Current (IE = 0)
Co lle ct or- Em it t er
Breakdown Voltage
(IB = 0)
VEB = 4 V
IC = 10 mA
V(BR)CES ∗ Collect or-Emitter
Breakdown Voltage
(VEB = 0)
IC = 10 µA
V(BR)EBO
VCE(sat )∗
Em it t er -Base
Breakdown Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
IC = 10 µA
IC = 100 mA IB = 10 mA
IC = 500 mA IB = 50 mA
VBE(s at)∗
hFE∗
Co lle ct or- Bas e
Saturation Voltage
DC Current G ain
IC = 100 mA
IC = 500 mA
IC = 0.1 mA
for group F
for group G
for group H
IC = 10 mA
for group F
for group G
for group H
IC = 100 mA
for group F
for group G
for group H
IC = 500 mA
for group F
for group G
for group H
IB = 10 mA
IB = 50 mA
VCE = 10 V
VCE = 1 V
VCE = 1 V
VCE = 2 V
fT
Transit ion F requency IC = 20 mA VCE = 10V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEB Emitt er Base
Capacitance
IC = 0 VCE = 0.5 V f = 1 MHz
NF Noise Figure
VCE = 5 V IC = 0.2 mA f = 1KHz
∆f = 200 Hz RG = 2 KΩ
ton
Switching On Time
IC = 150 mA
RL = 150 Ω
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
IB1 = -IB2 =15 mA
Min. Typ.
45
75
5
35
50
80
75
110
180
100
160
250
35
60
100
100
2
M a x.
20
20
20
0.3
0.7
1.25
2
250
400
630
12
80
10
100
Unit
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
ns
2/4
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