BCW66H(2006) データシートの表示（PDF） - Diotec Semiconductor Germany

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BCW66H
(Rev.:2006)

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

VCEsat

VCEsat

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

VBEsat

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 45 V, (E open)

ICB0

VCE = 45 V, Tj = 125°C, (E open)

ICB0

Emitter-Base cutoff current

VEB = 4 V, (C open)

IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 50 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

BCW66F ... BCW66H

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

300 mV

–

–

700 mV

–

–

1.25 V

–

–

2.0 V

–

–

20 nA

–

–

20 µA

–

–

20 nA

–

170 MHz

–

–

6 pF

–

–

60 pF

–

< 420 K/W 1)

BCW68F ... BCW68H

BCW66F = EF

BCW66G = EG

BCW66H = EH

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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