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74HC132-Q100 データシートの表示(PDF) - NXP Semiconductors.

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コンポーネント説明
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74HC132-Q100
NXP
NXP Semiconductors. NXP
74HC132-Q100 Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Nexperia
74HC132-Q100; 74HCT132-Q100
Quad 2-input NAND Schmitt trigger
Symbol Parameter
Conditions
74HCT132-Q100
VOH
HIGH-level output VI = VT+ or VT-; VCC = 4.5 V
voltage
IO = -20 μA
IO = -4.0 mA
VOL
LOW-level output VI = VT+ or VT-; VCC = 4.5 V
voltage
IO = 20 μA;
IO = 4.0 mA;
II
input leakage
VI = VCC or GND; VCC = 5.5 V
current
ICC
supply current VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
ΔICC
additional supply per input pin; VI = VCC - 2.1 V;
current
other inputs at VCC or GND;
IO = 0 A; VCC = 4.5 V to 5.5 V
CI
input capacitance
25 °C
Min Typ Max
4.4 4.5 -
3.98 4.32 -
-
0 0.1
- 0.15 0.26
-
- ±0.1
-
- 2.0
-
30 108
- 3.5 -
-40 °C to
+85 °C
Min Max
4.4
-
3.84
-
-
0.1
-
0.33
-
±1.0
-
20
-
135
-
-
-40 °C to Unit
+125 °C
Min Max
4.4
-V
3.7
-V
-
0.1 V
-
0.4 V
-
±1.0 μA
-
40 μA
-
147 μA
-
- pF
11 Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; CL = 50 pF; for test circuit see Figure 7.
Symbol Parameter
Conditions
Min
74HC132-Q100
tpd
propagation delay nA, nB to nY; see Figure 6
[1]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 5.0 V; CL = 15 pF
-
VCC = 6.0 V
tt
transition time
see Figure 6
-
[2]
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
CPD
power dissipation per package; VI = GND to VCC [3]
-
capacitance
25 °C
Typ
36
13
11
10
19
7
6
24
−40 °C to +125 °C Unit
Max
Max
Max
(85 °C) (125 °C)
125
155
190 ns
25
31
38 ns
-
-
- ns
21
26
32 ns
75
95
110 ns
15
19
22 ns
13
16
19 ns
-
-
- pF
74HC_HCT132_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 June 2018
© Nexperia B.V. 2018. All rights reserved.
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