DTC115ESATP データシートの表示（PDF） - ROHM Semiconductor

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DTC115ESATP

Digital transistors (built-in resistors)

ROHM Semiconductor 

Transistors

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Supply voltage

Input voltage

Output current

Power

dissipation

DTC115EM / DTC115EE

DTC115EUA / DTC115EKA

DTC115ESA

VCC

VI

IO

IC(Max.)

Pd

Junction temperature

Tj

Storage temperature

Tstg

DTC115EM / DTC115EE / DTC115EUA

DTC115EKA / DTC115ESA

Limits

Unit

50

V

−10~+40

V

20

mA

100

150

200

mW

300

150

°C

−55~+150

°C

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ. Max.

Unit

Conditions

Input voltage

Output voltage

VI(off)

VI(on)

VO(on)

−

−

0.5

VCC=5V, IO=100µA

V

3

−

−

VO=0.3V, IO=1mA

−

0.1

0.3

V

IO=5mA, II=0.25mA

Input current

II

−

−

0.15

mA VI=5V

Output current

IO(off)

−

−

0.5

µA VCC=50V, VI=0V

DC current gain

GI

82

−

−

−

IO=5mA, VO=5V

Input resistance

R1

70

100

130

kΩ

−

Resistance ratio

R2/R1

0.8

1

1.2

−

−

Transition frequency

fT

−

250

−

MHz VCE=10V, IE=−5mA, f=100MHz

∗

∗Transition frequency of the device.

!Package, marking, and packaging specifications

Type

DTC115EM DTC115EE DTC115EUA

Package

Marking

Packaging code

Basic ordering unit (pieces)

VMT3

29

T2L

8000

EMT3

29

TL

3000

UMT3

29

T106

3000

DTC115EKA

SMT3

29

T146

3000

DTC115ESA

SPT

−

TP

5000

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