AS5SS256K18DQ-10/ET データシートの表示（PDF） - Micross Components
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AS5SS256K18DQ-10/ET Datasheet PDF : 14 Pages
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SSRAM
AS5SS256K18
ABSOLUTE MAXIMUM RATINGS*
Voltage on V Supply Relative to V ............-0.5V to +4.6V
DD
SS
Voltage on VDDQ Supply Relative to VSS.........-0.5V to +4.6V
Storage Temperature (plastic) .....................-55C to +125C
Max Junction Temperature**.......................................+150C
Short Circuit Output Current..........…...........................100mA
*Stresses greater than those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
**Maximum junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55oC < TA < +125oC, -40oC < TA < +105oC and -40oC<TA<+85oC; VDD = +3.3V ± 5% unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
CONDITIONS
(0V<VIN<VDD)
Output(s) disabled;
0V<VIN<VDD
IOH = -4.0mA
IOL = 8.0 mA
SYMBOL
VIH
VIL
ILI
ILO
VOH
VOL
VDD
VDDQ
MIN
2.0
-0.3
-2
-2
2.4
--
3.135
3.135
MAX
VDD +0.3
0.8
2
2
--
0.5
3.465
3.465
UNITS
V
V
P$
P$
V
V
V
V
NOTES
1, 2
1, 2
3
1, 4
1, 4
1
1, 5
CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
CONDITIONS
TA = 25°C; f = 1MHz;
VDD = 3.3V
SYM
CI
CO
MAX
6
8
UNITS
pF
pF
NOTES
6
6
THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
CONDITIONS
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
SYM
TJA
TJC
DQ
DQC
Package Package UNITS
30.32 35.25 °C/W
6.85
7.96
°C/W
NOTES
6
6
NOTES:
1. All voltages referenced to VSS (GND)
2. Overshoot: VIH < +4.6V for t < tKC/2 for I < 20mA
Undershoot: VIL > -0.7V for t < tKC/2 for I < 20mA
Power-up: VIH < +3.465V and VDD<3.135V for t < 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10μA.
4. The load used for V , V testing is shown in Figure 2 for 3.3V I/O. AC load current is higher then the stated DC values.
OH OL
5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together, for 3.3V I/O operation only.
6. This parameter is sampled.
AS5SS256K18
Rev. 2.5 10/13
Micross Components reserves the right to change products or specifications without notice.
5
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