FCX690B(1999) データシートの表示（PDF） - Diodes Incorporated.

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FCX690B
(Rev.:1999)

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

Diodes Incorporated. 

FCX690B

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL Min Typ Max

Collector-Base

Breakdown Voltage

V(BR)CBO 45

Collector-Emitter

Breakdown Voltage

V(BR)CEO 45

Emitter-Base

Breakdown Voltage

V(BR)EBO 5

Collector Cut-Off Current ICBO

0.1

Emitter Cut-Off Current IEBO

0.1

Collector-Emitter

VCE(sat)

80

Saturation Voltage

300

Base-Emitter

VBE(sat)

0.9

Saturation Voltage

Base-Emitter

Turn-On Voltage

VBE(on)

0.85

Static Forward Current hFE

500

Transfer

400

Ratio

150

Transition Frequency

fT

150

UNIT

V

V

V

A

A

mV

mV

V

V

MHz

Input Capacitance

Cibo

200

pF

Output Capacitance

Cobo

16

pF

Switching Times

ton

toff

33

ns

1300

ns

*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%

CONDITIONS.

IC=100
A

IC=10mA*

IE=100
A

VCB=35V

VEB=4V

IC=0.1A, IB=0.5mA *

IC=1A, IB=5mA *

IC=1A, IB=10mA *

IC=1A, VCE=2V *

IC=100mA, VCE=2V*

IC=1A, VCE=2V*

IC=2A, VCE=2V*

IC=50mA, VCE=5V

f=50MHz

VEB=0.5V, f=1MHz

VCB=10V, f=1MHz

IC=500mA, IB1=IB2=50mA

VCC=10V

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