FJV3114R(2002) データシートの表示（PDF） - Fairchild Semiconductor

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FJV3114R
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJV3114R

Switching Application (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ)

• Complement to FJV4114R

Marking

3

2

1 SOT-23

1. Base 2. Emitter 3. Collector

Equivalent Circuit

C

R34

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

ICBO

hFE

VCE (sat)

fT

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

IC=10µA, IE=0

IC=100µA, IB=0

VCB=40V, IE=0

VCE=5V, IC=5mA

IC=10mA, IB=0.5mA

VCE=10V, IC=5mA

VCB=10V, IE=0

f=1.0MHz

VI(off)

VI(on)

R1

R1/R2

Input Off Voltage

Input On Voltage

Input Resistor

Resistor Ratio

VCE=5V, IC=100µA

VCE=0.2V, IC=5mA

R1

B

R2

Value

50

50

10

100

200

150

-55 ~ 150

E

Units

V

V

V

mA

mW

°C

°C

Min.

50

50

68

0.5

3.2

0.09

Typ.

250

3.7

4.7

0.1

Max.

0.1

Units

V

V

µA

0.3

V

MHz

pF

V

1.3

V

6.2

KΩ

0.11

©2002 Fairchild Semiconductor Corporation

Rev. A, August 2002

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