FJV3114RMTF データシートの表示（PDF） - ON Semiconductor
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FJV3114RMTF Datasheet PDF : 6 Pages
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June 2016
FJV3114R
NPN Epitaxial Silicon Transistor with Bias Resistor
Features
• 100 mA Output Current Capability
• Built-in Bias Resistor (R1 = 4.7 k, R2 = 47 k)
Application
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
FJV3114RMTF
Top Mark
R34
Description
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing compo-
nent count and simplifying circuit design.
Equivalent Circuit
C
R1
B
R2
E
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Value
50
50
10
100
150
-55 to 150
Unit
V
V
V
mA
C
C
© 2002 Fairchild Semiconductor Corporation
FJV3114R Rev. 1.5
1
www.fairchildsemi.com
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