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ZSH560 データシートの表示(PDF) - Diodes Incorporated.

部品番号
コンポーネント説明
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ZSH560
Diodes
Diodes Incorporated. Diodes
ZSH560 Datasheet PDF : 5 Pages
1 2 3 4 5
ZSH560
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 10V
Offstate Output Voltage 10V
Onstate Output
Source Current(Note 1)
Internally limited
Clamp Diode
Forward Current(Note 1)
100mA
Operating Junction
Temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-55 to 150°C
Power Dissipation
TO92
SOT223
780mW
2W(Note 2)
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
Low state output (Vcc increasing)
VIL
Threshold Voltage
High state output (Vcc decreasing)
VIH
Hysteresis
VH
OUPUT
4.5
4.61
4.7
V
4.5
4.59
4.7
V
0.01
0.02
0.05
V
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Output source saturation:
VOH
(Vcc=4.0V, Isource=8.0mA)
(Vcc=4.0V, Isource=2.0mA)
(Vcc=1.0V, Isource=2µA)
Onstate output source current
(Vcc =4.0V, Output=0V)
Isource
10
Offstate output leakage current
Ioh
(Vcc =5.0V, Output=0V)
Clamp diode forward voltage (If=10mA) Vf
0.6
Propagation delay
Td
(Vin 5V to 4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
20
0.02
1.2
1.5
VCC-1.3 V
VCC-1.2 V
VCC-0.4 V
50
mA
0.5
µA
1.5
V
µs
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Operating input voltage range
Vcc
1.0 to 6.5
V
Quiescent input current (Vcc=5V)
Iq
135
200
µA
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation for the SOT223 package is calculated assuming that the device is
mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as close to
ambient as possible.
4-335

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