MJD44H11 データシートの表示（PDF） - Powerex

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MJD44H11

Gate Driver

Powerex 

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

M57161L-01

Hybrid IC for IGBT Gate Driver

M57161L-01

Figure 5 M57161L-01 Typical Application Circuit

sufficiently high ripple current rating.

The example circuit in Figure 5 uses

a 150µF low impedance type

electrolytic for the input decoupling

M57161L-01

capacitor.

The driver’s built-in DC-DC

1

6

17 19

22 24

27 29

converter produces isolated +17.4V

and -6.5V outputs at pins 19 and 17

+

150µF

+ VD

+ - FO

Vin

3.3k

+

2.2µF

RG

470Ω

150µF 150µF +

G

CTRIP

RTC

E

IGBT Module

with respect to the common pin 18.

These voltages are supplied to

driver’s output stage on pins 22 and

24 to provide high current gate drive

with on and off driving voltages of

+15.5V and –5V. In order to deliver

the pulse current necessary for efficient switching, the output of the isolated DC-DC converter (pins 17, 18 and 19)

must be decoupled using a combination of low impedance electrolytic and film capacitors. In Figure 5 the 150µF

low impedance electrolytics and a 2.2µF stacked film or multi-layer ceramic are included for this purpose. These

capacitors should be located as close as possible to the pins of the hybrid gate driver. When driving small

modules it is usually acceptable to use smaller capacitors provided that that they have sufficient ripple current

capability and low enough impedance. However, very large modules and parallel module applications may require

500µF or more to achieve low enough impedance and high enough ripple current capability.

The series gate resistor (RG) should be selected based on the application requirements and module type being

used. Details for selecting RG can be found in Powerex IGBT module application notes. The minimum allowable

RG for the M57161L-01 is 2.2Ω. If a smaller value is desired, a booster stage must be added. (See Section 7.)

The back-to-back zener diodes from G to E that are normally recommended are not required with F-Series IGBT

modules because they are included as part of the modules internal RTC circuit.

Pin 28 is used to adjust the RTC detection time and total shut-down time. This adjustment was described in

detail in Section 3. To extend the trip time, CTRIP can be connected as shown in Figure 5. This capacitor should

be located as close as possible to the pins of the gate driver.

Pin 27 is an active low fault status signal. When a fault (short circuit or undervoltage) is detected this pin is

pulled down to the VEE supply. In Figure 5 a low speed optocoupler is utilized to provide isolation of the fault

feedback signal. The optocoupler is connected from the common of the isolated power supply (pin 18) to the fault

signal pin using a 470Ω current limiting resistor. When a fault occurs a current of approximately 10mA will flow in

the optocoupler’s LED. A 3.3kΩ resistor connected across the opto’s photodiode helps to improve noise immunity.

6. Control Power Supply Requirements

Figure 6 Supply Current versus Gate Charge

The control power supply current

required for the M57161L-01 is primarily a

function of the gate charge (QG) of the

IGBT module being driven and the

500

400 VGE = +15V/-5V

switching frequency. Figure 6 shows the

300

15V control power supply current (ID) as a

function of IGBT module gate charge for

200

various switching frequencies. This curve

100

provides an estimate of the required

current. The actual current will vary

depending on the operating conditions of

the IGBT module. To accommodate these

0

0

2

4

6

8

10

QG (µC)

variations, it is recommended that the 15V

supply be designed to provide 150% - 200% of the value indicated in Figure 6.

5 kHz

10 kHz

15 kHz

20 kHz

6

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