MJD44H11 データシートの表示（PDF） - Powerex
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MJD44H11 Datasheet PDF : 7 Pages
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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
M57161L-01
Hybrid IC for IGBT Gate Driver
M57161L-01
7. Driving Large IGBT Modules
In order to achieve efficient, reliable operation of large IGBT modules or multiple parallel connected
modules, a gate driver with high pulse current capability is required. The M57161L-01 hybrid gate driver is
designed to perform this function as a stand-alone unit in most applications. However, for optimum performance
with very large modules, it may be necessary to add an output booster stage to the hybrid gate driver. A booster
stage is required when the desired series gate resistance is lower than the minimum RG specified on the gate
driver’s data sheet.
Figure 7 M57161L-01 Typical Application Circuit With Booster Stage
1
+
150µF
+ VD
M57161L-01
6
+
VIN FO
17 19
3.3k
22 24
470Ω
RO
+
2.2µF
470µF 470µF +
2N4401 4.7kΩ
27 29
1N4148
CTRIP
RG
Q1
Q2
RG
RTC
RTC
Figure 7 is a schematic showing the M57161L-01 with an added booster stage consisting of a
complimentary transistor pair driving two parallel connected IGBT modules. The NPN and PNP booster transistors
(Q1, Q2) should be fast switching (tf < 200nS) and have sufficient current gain to deliver the desired peak output
current. Table 1 lists some combinations of booster transistors that can be used in the circuit shown in Figure 7.
The series resistor (RO) connected from the driver’s output on pin 23 to the booster stage is used to limit the peak
base current and help to damp oscillations in the booster stage. In most applications RO should be set so that RO
= hfe x RG, where hfe is the minimum gain of the booster stage transistors and RG is the series gate resistance.
Note that if the application has parallel modules then the effective RG must be used in the above equation. For
example, if there are 2 modules in parallel then RO = hfe x RG/2. When parallel connected modules are used with
the M57161L-01 it is also necessary to include a diode OR circuit so that the gates of the paralleled modules can
be independently monitored. An example of the diode OR is also shown in Figure 7.
Table 1 Booster Stage Transistors
Q1
NPN
MJD44H11
D44VH10
MJE15030
2SC4151
ZTX851
Q2
PNP
MJD45H11
D45VH10
MJE15031
2SA1601
ZTX951
Peak
current
15A
20A
15A
30A
20A
VCEO
80V
80V
150V
40V
80V
Manufacturer
ON Semiconductor
ON Semiconductor
ON Semiconductor
Shindengen
Zetex
Package
D2-Pac
TO-220
TO-220
Isolated TO-220
TO-92
7
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