DAN202 データシートの表示（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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DAN202 Datasheet PDF : 4 Pages
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DAN202
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● High Speed
● High Reliability
● Suitable for High Packing Density Layout
SOT- 23
3
Applications
● Extreme fast switches
2
1
Marking:
●N
Symbol
VR
IO
IFM
IFSM
PD
RθJA
Tj
Tstg
Parameter
DC Blocking Voltage
Continuous Forward Current
Peak Forward Current
Non-repetitive Peak Forward Surge Current@t= 8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
80
100
300
2
250
500
150
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Reverse recovery time
Symbol
V(BR)
IR
VF
Ctot
trr
Test conditions
IR=100μA
VR=70V
IF=100mA
VR=6V,f=1MHz
IF= IR=5mA, VR=6V
Min Typ Max Unit
80
V
0.1
μA
1.2
V
3.5
pF
4
ns
High Diode Semiconductor
1
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