DAP222 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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DAP222

SWITCHING DIODE

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

DAP222

WEJ ELECTRONIC CO.,LTD DAP222 SWITCHINGDIODE

FEATURES:

Power dissipation

PD:

150 mW (Tamb=25℃)

Collector current

IF:

100 mA

Collector-base voltage

VR:

80 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

CIRCUIT:

1.60

1.00

0.20

1.60

0.30

0.50

0.81

SOT-523

1

3

2

MARKING: P

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Symbol

V(BR)

IR

Test conditions

IR= 100µA

VR=70V

MIN

MAX

80

0.1

Forward voltage

VF

IF=100mA

1.2

Diode capacitance

CD

VR=6V, f=1MHz

3.5

UNIT

V

µA

V

pF

Reverse recovery time

trr

VR=6V, IF=5mA

4

ns

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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