FQD1N80TM(2014) データシートの表示（PDF） - Fairchild Semiconductor

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FQD1N80TM
(Rev.:2014)

N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω

Fairchild Semiconductor 

Same Type

VGS

50KΩ

as DUT

12V

200nF

300nF

10V

Qg

VGS

VDS

Qgs

Qgd

IG = co3nmsAt.

DUT

Charge

Figure 12. Gate Charge Test Circuit & Waveform

V10GVS

VDS

VGS

RG

RL

VDD

DUT

VDS

90%

VGS 10%

td(on)

tr

t on

td(off)

tf

t off

Figure 13. Resistive Switching Test Circuit & Waveforms

V1G0GVSS

tp

VDS

ID

RG

L

EAS = --21-- L IAS2

------B--V--D--S-S-------

BVDSS - VDD

BVDSS

IAS

VDD

ID (t)

DUT

VDD

VDS (t)

tp

Time

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

©2009 Fairchild Semiconductor Corporation

5

FQD1N80 / FQU1N80 Rev. C2

www.fairchildsemi.com

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