FZT949 データシートの表示（PDF） - KEXIN Industrial

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FZT949

PNP Silicon Planar High Current (High Performance) Transistor

KEXIN Industrial 

SMD Type

FZT949

Transistors

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter ON voltage *

Static Forward Current Transfer Ratio

Transitional frequency

Output capacitance

Turn-on time

Turn-off time

* Pulse test: tp = 300 ìs; d

0.02.

Symbol

Testconditons

V(BR)CBO IC=-100ìA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100ìA

ICBO

VCB=-40V

VCB=-40V,Ta = 100

IEBO VEB=-6V

IC=-0.5A, IB=-10mA*

VCE(sat)

IC=-2A, IB=-200mA*

IC=-4A, IB=-400mA*

IC=-6A, IB=-250mA*

VBE(sat) IC=-5.5A, IB=-500mA

VBE(on) IC=-5.5A, VCE=-1V

IC=-10mA, VCE =-1V

IC=-1A, VCE =-1V*

hFE

IC=-5A, VCE =-1V*

IC=-20A, VCE =-2V*

fT IC=-100mA, VCE=-10V, f=50MHz

Cobo VCB=-10V, f=1MHz

t(on) IC=-4A, VCC=-10V

t(off) IB1=IB2=-400mA

Min Typ Max Unit

-50 -80

V

-30 -45

V

-50 -80

V

-50 nA

-1 ìA

-10 nA

-50 -75

-85 -140

-190 -270

V

-350 -440

-1100 -1250 V

-900 -1060 V

100 200

100 200 300

75 140

35

100

MHz

122

pF

120

ns

130

ns

2 www.kexin.com.cn

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