FZT593TA データシートの表示（PDF） - Diodes Incorporated.

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FZT593TA

100V PNP MEDIUM POWER TRANSISTOR IN SOT223

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FZT593

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 11)

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

DC Current Gain (Note 11)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

ICES

IEBO

VCE(sat)

VBE(sat)

VBE(on)

hFE

Min Typ

-120



-100



-5































100



100



100



50



Current Gain-Bandwidth Product

fT

50



Output Capacitance

Cobo





Note:

11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max







-100

-100

-100

-0.2

-0.3

-1.1

-1.0





300





5

Unit

V

V

V

nA

nA

nA

V

V

V



MHz

pF

Test Condition

IC = -100µA

IC = -10mA

IE = -100µA

VCB = -100V

VCE = -100V

VEB = -4V

IC = -250mA, IB = -25mA

IC = -500mA, IB = -50mA

IC = -500mA, IB = -50mA

IC = -500mA, VCE = -5V

IC = -1mA, VCE = -5V

IC = -250mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

VCE = -10V, IC = -50mA

f = 100MHz

VCB = -10V, f = 1MHz

FZT593

Document Number DS33144 Rev. 4 - 2

4 of 7

www.diodes.com

June 2015

© Diodes Incorporated

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