VP2110 データシートの表示（PDF） - Supertex Inc

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VP2110

P-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc 

Typical Performance Curves

BVDSS Variation with Temperature

-1.1

VP2106/VP2110

On-Resistance vs. Drain Current

20

16

VGS = -5V

12

-1.0

VGS = -10V

8

4

-0.9

-50

0

50

100

150

Tj (°C)

Transfer Characteristics

-1.0

VDS = -25V

TA = -55°C

-0.8

-0.6

25°C

-0.4

125°C

-0.2

0

0

-2

-4

-6

-8

-10

VGS (volts)

Capacitance vs. Drain-to-Source Voltage

100

f = 1MHz

75

50

25

0

0

CISS

COSS

CRSS

-10

-20

-30

-40

VDS (volts)

0

0

-0.2

-0.4

-0.6

-0.8

-1.0

ID (amperes)

V(th) and RDS Variation with Temperature

2.0

1.4

RDS(ON) @ -10V, 0.5A

1.6

1.2

1.2

1.0

0.8

0.8

V(th)@ 1mA

0.4

0.6

0

-50

0

50

100

150

Tj (°C)

Gate Drive Dynamic Characteristics

-10

VDS = -10V

-8

VDS = -40V

-6

101 pF

-4

-2

35 pF

0

0

1.0

2.0

QG (nanocoulombs)

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

4

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

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