MCM72F6 データシートの表示（PDF） - Motorola => Freescale
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MCM72F6 Datasheet PDF : 10 Pages
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ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS
Vin, Vout – 0.5 to VDD + 0.5
V
Output Current (per I/O)
Iout
± 20
mA
Power Dissipation
MCM72F6
PD
MCM72F7
4.6
W
9.2
Ambient Temperature
TA
0 to 70
°C
Die Temperature
TJ
110
°C
Temperature Under Bias
Tbias
– 10 to + 85
°C
Storage Temperature
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised that
normal precautions be taken to avoid application
of any voltage higher than maximum rated volt-
ages to this high–impedance circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Supply Voltage (Operating Voltage Range)
VDD
Input High Voltage
VIH
Input Low Voltage
VIL
* VIL ≥ – 2.0 V for t ≤ tKHKH/2.
Min
3.135
2.0
– 0.5*
Max
Unit
3.6
V
VDD + 0.3
V
0.8
V
DC CHARACTERISTICS
Parameter
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Output Leakage Current (0 V ≤ Vin ≤ VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Min
Ilkg(I)
—
Ilkg(O)
—
VOL
—
VOH
2.4
Max
Unit
± 1.0
µA
± 1.0
µA
0.4
V
—
V
POWER SUPPLY CURRENTS
Parameter
AC Supply Current (Device Selected, All Outputs Open,
Cycle Time ≥ tKHKH min)
Symbol
Min
MCM72F6DG9
IDDA
—
MCM72F6DG10
MCM72F6DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG12
Max
Unit
900
mA
860
840
1800
1720
1680
CMOS Standby Supply Current (Deselected,
Clock (K) Cycle Time ≥ tKHKH, All Inputs Toggling at
CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
MCM72F6DG9
ISB1
—
MCM72F6DG10
MCM72F6DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG912
440
mA
400
380
880
800
760
Clock Running Supply Current (Deselected,
Clock (K) Cycle Time ≥ tKHKH, All Other Inputs
Held to Static CMOS Levels Vin ≤ VSS + 0.2 V
or ≥ VDD – 0.2 V)
MCM72F6DG9
ISB2
—
MCM72F6DG10/12
MCM72F7DG9
MCM72F7DG10/12
160
mA
140
320
280
MCM72F6 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
W, K
Cin
—
Other Inputs
—
16
pF
36
I/O Capacitance
CI/O
—
19
pF
MCM72F6•MCM72F7
6
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