HM62W8511CJP10 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

HM62W8511CJP10

4M High Speed SRAM (512-kword × 8-bit)

Renesas Electronics 

AC Characteristics

(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.)

Test Conditions

• Input pulse levels: 3.0 V/0.0 V

• Input rise and fall time: 3 ns

• Input and output timing reference levels: 1.5 V

• Output load: See figures (Including scope and jig)

1.5 V

Dout Zo=50 Ω

RL=50 Ω

Dout

30 pF

353 Ω

HM62W8511HC Series

3.3 V

319Ω

5 pF

Output load (A)

Output load (B)

(for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW)

Read Cycle

Parameter

Read cycle time

Address access time

Chip select access time

Output enable to output valid

Output hold from address change

Chip select to output in low-Z

Output enable to output in low-Z

Chip deselect to output in high-Z

Output disable to output in high-Z

Symbol

tRC

tAA

tACS

t

OE

t

OH

tCLZ

tOLZ

tCHZ

tOHZ

HM62W8511HC

-10

-12

Min Max Min

10

— 12

—

10 —

—

10 —

—

5

—

3

—3

3

—3

0

—0

—

5

—

—

5

—

Max Unit

— ns

12 ns

12 ns

6

ns

— ns

— ns

— ns

6

ns

6

ns

Notes

1

1

1

1

Rev. 2, Nov. 2001, page 7 of 14

Share Link: