ILD32 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

ILD32

Photodarlington Optocoupler

Infineon Technologies 

DUAL/QUADCHANNEL ILD32/ILQ32

Photodarlington Optocoupler

FEATURES

• Very High Current Transfer Ratio, 500% Min.

• Isolation Test Voltage, 5300 VRMS

• High Isolation Resistance, 1011 Ω Typical

• Low Coupling Capacitance

• Standard Plastic DIP Package

• Underwriters Lab File #E52744

•

V

DE

VDE 0884 Available with Option 1

Maximum Ratings (Each Channel)

Emitter

Peak Reverse Voltage ...................................... 3.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C........................... 100 mW

Derate Linearly from 25°C ..................... 1.33 mW/°C

Detector

Collector-Emitter Breakdown Voltage ............... 30 V

Collector (Load) Current............................... 125 mA

Power Dissipation at 25°C Ambient ............ 150 mW

Derate Linearly from 25°C ....................... 2.0 mW/°C

Package

Isolation Test Voltage (between emitter

and detector refer to standard climate

23°C/50%RH, DIN 50014)

t=1.0 sec.............................................. 5300 VRMS

Creepage .................................................. ≥7.0 mm

Clearance .................................................. ≥7.0 mm

Comparative Tracking Index per

DIN IEC 112/VDE303, part 1 ........................ ≥175

Isolation Resistance

VIO=500V, TA=25°C ........................... RIO=1012 Ω

VIO=500V, TA=100°C ......................... RIO=1011 Ω

Total Dissipation at 25°C Ambient

ILD32 ...................................................... 400 mW

ILQ32 ...................................................... 500 mW

Derate Linearly from 25°C

ILD32 ................................................ 5.33 mW/°C

ILQ32 ................................................ 6.67 mW/°C

Storage Temperature .................... –55°C to +150°C

Operating Temperature ................ –55°C to +100°C

Lead Soldering Time at 260°C ..................... 10 sec.

DESCRIPTION

The ILD32/ILQ32 are optically coupled isolators

with a Gallium Arsenide infrared LED and a silicon

photodarlington sensor. Switching can be achieved

while maintaining a high degree of isolation

between driving and load circuits. These optocou-

plers can be used to replace reed and mercury

relays with advantages of long life, high speed

switching and elimination of magnetic fields.

The ILD32 has two isolated channels in a DIP pack-

age, and the ILQ32 has four channels. These

devices can be used to replace 4N32s or 4N33s in

applications calling for several single channel

optocouplers on a board.

Dimensions in inches (mm)

Dual Channel

pin one ID

4 321

.255 (6.48)

.268 (6.81)

5 678

Anode 1

Cathode 2

Cathode 3

8 Emitter

7 Collector

6 Collector

.030 (0.76)

.045 (1.14)

4° typ.

.050 (1.27)

.018 (.46)

.022 (.56)

.379 (9.63)

.390 (9.91)

Anode 4

5 Emitter

.031 (0.79)

.300 (7.62)

typ.

.130 (3.30)

.150 (3.81)

.020 (.51 )

.035 (.89 )

.100 (2.54) typ.

10 °

3°–9°

.008 (.20)

.012 (.30)

.230(5.84)

.110 (2.79) .250(6.35)

.130 (3.30)

Quad Channel

Anode 1

16 Emitter

pin one ID Cathode 2

15 Collector

876543 21

Cathode 3

14 Collector

.255 (6.48)

.265 (6.81)

9 10 11 12 13 14 15 16

Anode 4

Anode 5

Cathode 6

13 Emitter

12 Emitter

11 Collector

.779 (19.77 )

.790 (20.07)

Cathode 7

Anode 8

10 Collector

9 Emitter

4°

.018 (.46)

.022 (.56)

.030 (.76)

.045 (1.14)

.031(.79)

.130 (3.30)

.150 (3.81)

.100 (2.54)typ.

.020(.51)

.035 (.89)

.050 (1.27)

.300 (7.62)

typ.

10°

typ.

3°–9°

.008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30) .230 (5.84)

.250 (6.35)

Table 1. Electrical Characteristics, TA=25°C

Parameter

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage

VF

— 1.25 1.5 V

IF=10 mA

Reverse Current

IR

— 0.1 100 µA VR=3.0 V

Capacitance

CO

— 25 —

pF VR=0 V

Detector

Breakdown Voltage BVCEO 30 —

—

V

Collector-Emitter

Breakdown Voltage BVECO 5.0 10 —

V

Emitter-Collector

IC=100 µA

IF=0

IE=100 µA

Collector-Emitter

Leakage Current

Package

ICEO

— 1.0 100 nA VCE=10V

IF=0

Current Transfer Ratio CTR

500 —

—

%

IF=10 mA

VCE=10V

Collector Emitter

Saturation Voltage

VCEsat

—

—

1.0 V

IC=2.0 mA

IF=8.0 mA

Isolation Capacitance CISOL

— 0.5 —

pF —

Turn-On Time

Turn-Off Time

ton

— 15 —

µs VCC=10 V

toff

— 30 —

µs

IF=5.0 mA

RL=100 Ω

 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

2–179

February 24, 2000-21

Share Link: